The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 19, 2019
Filed:
Aug. 11, 2016
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, KR;
Inventors:
Jae-Hyok Ko, Hwaseong-si, KR;
Min-Chang Ko, Hwaseong-si, KR;
Han-Gu Kim, Seongnam-si, KR;
Jong-Kyu Song, Incheon, KR;
Jin Heo, Suwon-si, KR;
Assignee:
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/02 (2006.01); H01L 29/74 (2006.01); H01L 29/78 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0248 (2013.01); H01L 27/0262 (2013.01); H01L 29/742 (2013.01); H01L 29/7412 (2013.01); H01L 29/7436 (2013.01); H01L 29/7817 (2013.01); H01L 29/66681 (2013.01);
Abstract
An electrostatic discharge (ESD) protection device includes an N-type laterally diffused metal oxide semiconductor (LDMOS) transistor including a source electrode, a gate electrode, and a well bias electrode that are connected to a first pad receiving a first voltage, and a drain electrode connected to a middle node. The ESD protection device further includes a silicon controlled rectifier (SCR) connected between the middle node and a second pad receiving a second voltage higher than the first voltage.