The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 19, 2019

Filed:

Aug. 16, 2017
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-Do, KR;

Inventor:

Jong-Pil Son, Seongnam-si, KR;

Assignee:

SAMSUNG ELECTRONICS CO., LTD., Suwon-si, Gyeonggi-Do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/373 (2006.01); H01L 23/36 (2006.01); H01L 25/18 (2006.01); H01L 27/118 (2006.01); H01L 27/108 (2006.01); H01L 23/535 (2006.01); H01L 23/00 (2006.01); H05K 1/18 (2006.01); H01L 21/48 (2006.01); H01L 23/495 (2006.01); H01L 23/367 (2006.01); H01L 23/538 (2006.01); H01L 25/065 (2006.01); H01L 23/31 (2006.01); H01L 23/40 (2006.01);
U.S. Cl.
CPC ...
H01L 23/373 (2013.01); H01L 21/4882 (2013.01); H01L 23/36 (2013.01); H01L 23/3677 (2013.01); H01L 23/49568 (2013.01); H01L 23/535 (2013.01); H01L 23/538 (2013.01); H01L 24/06 (2013.01); H01L 24/09 (2013.01); H01L 24/14 (2013.01); H01L 24/17 (2013.01); H01L 24/18 (2013.01); H01L 25/0657 (2013.01); H01L 25/18 (2013.01); H01L 27/10805 (2013.01); H01L 27/118 (2013.01); H05K 1/181 (2013.01); H01L 23/3171 (2013.01); H01L 2023/405 (2013.01); H01L 2023/4037 (2013.01); H01L 2023/4043 (2013.01); H01L 2023/4062 (2013.01); H01L 2023/4068 (2013.01); H01L 2224/0401 (2013.01); H01L 2224/04042 (2013.01); H01L 2224/16145 (2013.01); H01L 2224/17519 (2013.01); H01L 2224/32145 (2013.01); H01L 2224/48091 (2013.01); H01L 2224/48227 (2013.01); H01L 2224/73204 (2013.01); H01L 2224/73207 (2013.01); H01L 2224/73253 (2013.01); H01L 2224/73265 (2013.01); H01L 2225/0651 (2013.01); H01L 2225/06513 (2013.01); H01L 2225/06541 (2013.01); H01L 2225/06565 (2013.01); H01L 2225/06589 (2013.01); H01L 2924/00014 (2013.01); H01L 2924/1431 (2013.01); H01L 2924/1432 (2013.01); H01L 2924/1434 (2013.01); H01L 2924/15311 (2013.01); H05K 2201/10159 (2013.01);
Abstract

A semiconductor memory device includes an integrated circuit (IC) chip structure, wherein the IC chip includes a substrate, a memory cell disposed on the substrate, and a local well disposed on the substrate, wherein a conductivity type of the local well is different from a conductivity type of the substrate, a wiring stack structure disposed on the IC chip structure, wherein the wiring stack structure includes a signal transfer pattern connected to the memory cell through a signal interconnector, and a thermal dispersion pattern connected to the local well through a thermal interconnector, and a heat transfer structure connected to the thermal dispersion pattern for transferring heat to the thermal dispersion pattern from a heat source.


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