The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 19, 2019
Filed:
Feb. 23, 2018
Applicant:
Hitachi Kokusai Electric Inc., Tokyo, JP;
Inventors:
Tsukasa Kamakura, Toyama, JP;
Kazuhide Asai, Toyama, JP;
Assignee:
HITACHI KOKUSAI ELECTRIC INC., Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); C23C 16/52 (2006.01); H01L 21/66 (2006.01); H01L 21/67 (2006.01); C23C 16/455 (2006.01);
U.S. Cl.
CPC ...
H01L 22/10 (2013.01); C23C 16/45544 (2013.01); C23C 16/52 (2013.01); H01L 21/0228 (2013.01); H01L 21/67276 (2013.01);
Abstract
A method of manufacturing a semiconductor device includes supplying an inert gas into a process chamber; exhausting an internal atmosphere of the process chamber from an exhaust part; acquiring first data serving as reference data on a relationship between a flow rate of the inert gas and a pressure in one of the process chamber or the exhaust part; processing a substrate accommodated in the process chamber by supplying a processing gas into the process chamber; and adjusting exhaust characteristics by adjusting a valve opening degree of an exhaust regulating part installed in the exhaust part.