The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 19, 2019
Filed:
Nov. 07, 2017
Applicant:
Semiconductor Manufacturing International (Shanghai) Corporation, Shanghai, CN;
Inventors:
Ming Wang, Shanghai, CN;
Qiancheng Ma, Shanghai, CN;
Yong Cheng, Shanghai, CN;
Lihua Teng, Shanghai, CN;
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/07 (2006.01); H01L 21/8234 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 29/06 (2006.01); H01L 29/872 (2006.01); H01L 29/47 (2006.01);
U.S. Cl.
CPC ...
H01L 21/823418 (2013.01); H01L 27/0727 (2013.01); H01L 29/0638 (2013.01); H01L 29/66659 (2013.01); H01L 29/7835 (2013.01); H01L 29/0619 (2013.01); H01L 29/0653 (2013.01); H01L 29/47 (2013.01); H01L 29/66143 (2013.01); H01L 29/872 (2013.01);
Abstract
A semiconductor device may include a first-type substrate. The semiconductor device may further include a second-type well configured to form a PN junction with the first-type substrate. The semiconductor device may further include a diode component configured to form a diode with the second-type well. The diode may be connected to the PN junction in a reverse series connection. The second-type may be N-type if the first-type is P-type, and wherein the second-type may be P-type if the first-type is N-type.