The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 19, 2019
Filed:
Sep. 09, 2016
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Ki-Don Lee, Austin, TX (US);
Daniel Sawyer, Pflugerville, TX (US);
Steven English, Cedar Park, TX (US);
Abstract
An interconnect structure and a method to form an interconnect structure utilizes a high-aspect ratio single-damascene line and a non-damascene via. The interconnect includes a first single-damascene interconnect line disposed in a first interlayer dielectric layer, and a non-damascene via on the first single-damascene interconnect line that may be formed from cobalt, titanium and/or tungsten. A first SiCN layer may be formed on one or more sidewalls of the non-damascene via. A second single-damascene layer may be formed on the non-damascene via in which the second single-damascene layer may be disposed in a second interlayer dielectric layer. A second SiCN layer may be formed on at least part of an upper surface of the first single-damascene layer, and a third SiCN layer may be formed on at least part of an upper surface of the second single-damascene layer.