The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 19, 2019

Filed:

Oct. 28, 2016
Applicant:

Analog Devices, Inc., Norwood, MA (US);

Inventor:

Howard R. Samuels, Newton, MA (US);

Assignee:

Analog Devices, Inc., Norwood, MA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03K 17/687 (2006.01); G11C 27/02 (2006.01); H03K 17/10 (2006.01); H03K 17/693 (2006.01);
U.S. Cl.
CPC ...
G11C 27/02 (2013.01); H03K 17/102 (2013.01); H03K 17/693 (2013.01); H03K 2217/0036 (2013.01); H03K 2217/0054 (2013.01);
Abstract

According to some aspects, a low-leakage switch is provided. In some embodiments, the low-leakage switch includes a plurality of pass transistors in series that selectively couple two ports of the low-leakage switch and a node biasing circuit coupled to a node between the plurality of pass transistors. In these embodiments, the node biasing circuit may adjust a voltage at the node to change the gate-to-source voltage of the pass transistors and, thereby, reduce the leakage current through the pass transistors when the low-leakage switch is turned off. The node biasing circuit may also include circuitry to reduce the leakage current introduced by the node biasing circuit into the node when the low-leakage switch is turned on.


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