The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 19, 2019
Filed:
Jun. 02, 2017
Samsung Electronics Co., Ltd., Suwon-si, KR;
Daeshik Kim, Hwaseong-si, KR;
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;
Abstract
A nonvolatile memory device includes: first memory cells connected to a first source line and a first bit line; second memory cells connected to a second source line and a second bit line; and a sense amplifier circuit connected to the first and second source lines and the first and second bit lines. The sense amplifier circuit includes: a first sense amplifier configured to apply a first read voltage to the first bit line and output a first amount of current of a selected first memory cell; a second sense amplifier configured to apply a second read voltage to the second bit line and output a second amount of current of a selected second memory cell; and a comparator configured to compare the first amount of current with the second amount of current to identify data of the selected first memory cell.