The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 19, 2019

Filed:

Oct. 31, 2017
Applicant:

Lg Display Co., Ltd., Seoul, KR;

Inventors:

Yongseok Park, Goyang-si, KR;

Hyelim Ji, Paju-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G09G 3/36 (2006.01); H01L 27/12 (2006.01); H01L 29/423 (2006.01); H01L 29/786 (2006.01); G02F 1/1333 (2006.01); G02F 1/1335 (2006.01); G02F 1/1362 (2006.01); G02F 1/1368 (2006.01);
U.S. Cl.
CPC ...
G09G 3/3677 (2013.01); G09G 3/3688 (2013.01); H01L 27/124 (2013.01); H01L 27/1225 (2013.01); H01L 27/1248 (2013.01); H01L 27/1255 (2013.01); H01L 29/42384 (2013.01); H01L 29/7869 (2013.01); H01L 29/78696 (2013.01); G02F 1/1368 (2013.01); G02F 1/13338 (2013.01); G02F 1/133512 (2013.01); G02F 1/133514 (2013.01); G02F 1/136286 (2013.01); G02F 2202/104 (2013.01); G09G 2300/0426 (2013.01); G09G 2310/0251 (2013.01); G09G 2310/0286 (2013.01); G09G 2310/0289 (2013.01); G09G 2310/08 (2013.01); G09G 2320/043 (2013.01);
Abstract

A gate driver and a display device using the same are disclosed. The gate driver includes a first transistor configured to pre-charge a Q node, a second transistor configured to raise the output voltage depending on a voltage of the Q node, a third transistor configured to charge a QB node, a fourth transistor configured to lower the output voltage depending on a voltage of the QB node, and a capacitor connected between a gate and a source in at least one of the second transistor and the third transistor. The capacitor has a capacitance greater than a capacitance between the gate and a drain of the transistor to which the capacitor is connected. The capacitor includes an upper capacitor disposed on an organic passivation layer covering the transistors.


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