The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 19, 2019
Filed:
Dec. 15, 2016
Liji Huang, Santa Clara, CA (US);
Chih-chang Chen, Cupertino, CA (US);
Liji Huang, Santa Clara, CA (US);
Chih-Chang Chen, Cupertino, CA (US);
Wisenstech Ltd., Santa Clara, CA (US);
Abstract
The design and manufacture method of a pressure sensor utilizing thermal field sensing with a thermal isolated membrane of a diaphragm structure is disclosed in the present invention. This device is made with silicon micromachining (a.k.a. MEMS, Micro Electro Mechanical Systems) process for applications of pressure measurement with large dynamic range, high accuracy and high stability during temperature variation. This device is applicable for all types of pressure metrology. The said thermal field pressure sensing device operates with thermistors on a membrane of the diaphragm structure made of silicon nitride with a heat isolation cavity underneath or a single side thermal isolated silicon nitride membrane with a reference cavity. This device can be seamlessly integrated with a thermal flow sensor with the same process.