The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 19, 2019
Filed:
Jan. 11, 2017
Applicant:
Fuji Electric Co., Ltd., Kawasaki-shi, Kanagawa, JP;
Inventor:
Masayuki Miyazaki, Matsumoto, JP;
Assignee:
FUJI ELECTRIC CO., LTD., Kawasaki, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/20 (2006.01); H01L 21/36 (2006.01); C30B 33/00 (2006.01); B24B 37/10 (2012.01); C30B 25/20 (2006.01); C30B 29/36 (2006.01); C30B 33/02 (2006.01); C30B 33/08 (2006.01); H01L 21/02 (2006.01); H01L 21/306 (2006.01); C23C 16/32 (2006.01); C23C 16/56 (2006.01); C30B 25/18 (2006.01); C30B 33/10 (2006.01); H01L 29/16 (2006.01); B24B 37/04 (2012.01); B24B 37/24 (2012.01);
U.S. Cl.
CPC ...
C30B 33/005 (2013.01); B24B 37/042 (2013.01); B24B 37/10 (2013.01); B24B 37/245 (2013.01); C23C 16/325 (2013.01); C23C 16/56 (2013.01); C30B 25/186 (2013.01); C30B 25/20 (2013.01); C30B 29/36 (2013.01); C30B 33/02 (2013.01); C30B 33/08 (2013.01); C30B 33/10 (2013.01); H01L 21/0206 (2013.01); H01L 21/0262 (2013.01); H01L 21/02236 (2013.01); H01L 21/02378 (2013.01); H01L 21/02529 (2013.01); H01L 21/30604 (2013.01); H01L 21/30625 (2013.01); H01L 29/1608 (2013.01); H01L 21/02664 (2013.01);
Abstract
A method, for manufacturing a silicon carbide semiconductor device, includes: forming a silicon carbide epitaxial film on a silicon carbide substrate; flattening a surface of the epitaxial film by using chemical mechanical polishing such that the surface of the epitaxial film has an arithmetic mean roughness Ra of 0.3 nm or less; thermally oxidizing the surface of the epitaxial film to form a sacrificial oxide; removing the sacrificial oxide; and cleaning, by using deionized water, a surface of the epitaxial film exposed by the removing of the sacrificial oxide.