The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 19, 2019
Filed:
Nov. 27, 2015
Applicant:
Showa Denko K.k., Tokyo, JP;
Inventors:
Daisuke Muto, Chichibu, JP;
Jun Norimatsu, Yokohama, JP;
Assignee:
SHOWA DENKO K.K., Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); C30B 25/20 (2006.01); C30B 25/12 (2006.01); C30B 29/36 (2006.01); C23C 16/32 (2006.01); C23C 16/458 (2006.01); H01L 29/16 (2006.01); C30B 25/16 (2006.01); C23C 16/455 (2006.01); H01L 21/687 (2006.01);
U.S. Cl.
CPC ...
C30B 25/20 (2013.01); C23C 16/325 (2013.01); C23C 16/4581 (2013.01); C23C 16/4584 (2013.01); C23C 16/4585 (2013.01); C23C 16/45504 (2013.01); C30B 25/12 (2013.01); C30B 25/165 (2013.01); C30B 29/36 (2013.01); H01L 21/0262 (2013.01); H01L 21/02378 (2013.01); H01L 21/02433 (2013.01); H01L 21/02529 (2013.01); H01L 21/68721 (2013.01); H01L 21/68735 (2013.01); H01L 21/68764 (2013.01); H01L 21/68771 (2013.01); H01L 29/1608 (2013.01); H01L 21/02634 (2013.01);
Abstract
Provided is a manufacturing device capable of effectively and sufficiently reducing an edge crown. The wafer support is used in a chemical vapor phase growth device in which an epitaxial film is grown on a main surface of a wafer using a chemical vapor deposition method, the wafer support including: a wafer mounting surface having an upper surface on which a substrate is mounted; and a wafer support portion that rises to surround a wafer to be mounted, in which a height from an apex of the wafer support portion to a main surface of the wafer mounted on the wafer mounting surface is 1 mm or more.