The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 12, 2019

Filed:

Jun. 29, 2016
Applicant:

Sony Corporation, Tokyo, JP;

Inventors:

Hiroyuki Yamaguchi, Fukushima, JP;

Hiroshi Horiuchi, Fukushima, JP;

Kenichi Kawase, Fukushima, JP;

Tadahiko Kubota, Kanagawa, JP;

Hideki Nakai, Fukushima, JP;

Takakazu Hirose, Fukushima, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01M 4/58 (2010.01); H01M 4/36 (2006.01); H01M 4/13 (2010.01); H01M 4/134 (2010.01); H01M 4/139 (2010.01); H01M 4/38 (2006.01); H01M 4/485 (2010.01); H01M 10/0567 (2010.01); H01M 10/0569 (2010.01); H01M 10/058 (2010.01); H01M 4/48 (2010.01); H01M 10/0525 (2010.01); H01M 10/0587 (2010.01); H01M 4/131 (2010.01); H01M 10/052 (2010.01); H01M 4/02 (2006.01);
U.S. Cl.
CPC ...
H01M 4/366 (2013.01); H01M 4/13 (2013.01); H01M 4/134 (2013.01); H01M 4/139 (2013.01); H01M 4/38 (2013.01); H01M 4/386 (2013.01); H01M 4/387 (2013.01); H01M 4/483 (2013.01); H01M 4/485 (2013.01); H01M 10/058 (2013.01); H01M 10/0525 (2013.01); H01M 10/0567 (2013.01); H01M 10/0569 (2013.01); H01M 10/0587 (2013.01); H01M 4/131 (2013.01); H01M 10/052 (2013.01); H01M 2004/027 (2013.01); H01M 2300/0028 (2013.01); H01M 2300/0034 (2013.01); Y02E 60/122 (2013.01); Y02P 70/54 (2015.11);
Abstract

A battery including an anode with an anode active material layer that includes anode active material particles made of an anode active material including at least one of silicon and tin as an element. An oxide-containing film including an oxide of at least one kind selected from the group consisting of silicon, germanium and tin is formed in a region of the surface of each anode active material particle in contact with an electrolytic solution by a liquid-phase method such as a liquid-phase deposition method. The region in contact with the electrolytic solution of the surface of each anode active material particle is covered with the oxide-containing film. The thickness of the oxide-containing film is preferably within a range from 0.1 nm to 500 nm both inclusive.


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