The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 12, 2019

Filed:

Jun. 03, 2014
Applicant:

SK Hynix Inc., Icheon-Si, KR;

Inventors:

Jae-Hong Kim, Icheon-Si, KR;

Min-Suk Lee, Icheon-Si, KR;

Assignee:

SK hynix Inc., Icheon-si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 43/08 (2006.01); H01L 43/02 (2006.01); H01L 43/10 (2006.01); H01L 43/12 (2006.01);
U.S. Cl.
CPC ...
H01L 43/08 (2013.01); H01L 43/02 (2013.01); H01L 43/12 (2013.01);
Abstract

This technology provides an electronic device and a method of fabricating the same. An electronic device in accordance with an implementation of this document includes semiconductor memory, and the semiconductor memory includes an interlayer dielectric layer formed over a substrate and having a contact hole; a lower contact filled in a part of the contact hole; and a variable resistance element which is disposed over and coupled to the lower contact, and has a first part filled in the contact hole and a second part disposed over the first part and protruding over the interlayer dielectric layer, wherein the first part includes a first metal which has a higher electron affinity than a component included in the second part, and an oxide of the first metal is an insulating material.


Find Patent Forward Citations

Loading…