The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 12, 2019

Filed:

Nov. 29, 2017
Applicant:

Glo Ab, Lund, SE;

Inventors:

Anusha Pokhriyal, Sunnyvale, CA (US);

Mariana Munteanu, Sunnyvale, CA (US);

Fariba Danesh, Pleasanton, CA (US);

Assignee:

GLO AB, Lund, SE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/00 (2010.01); H01L 33/62 (2010.01); H01L 33/12 (2010.01); H01L 33/20 (2010.01); H01L 33/32 (2010.01); H01L 33/38 (2010.01); H01L 33/44 (2010.01); H01L 33/60 (2010.01); H01L 23/00 (2006.01); H01L 33/06 (2010.01); H01L 33/40 (2010.01); H01L 33/10 (2010.01);
U.S. Cl.
CPC ...
H01L 33/62 (2013.01); H01L 24/27 (2013.01); H01L 24/29 (2013.01); H01L 33/007 (2013.01); H01L 33/06 (2013.01); H01L 33/10 (2013.01); H01L 33/12 (2013.01); H01L 33/20 (2013.01); H01L 33/32 (2013.01); H01L 33/38 (2013.01); H01L 33/405 (2013.01); H01L 33/44 (2013.01); H01L 33/60 (2013.01); H01L 2224/29083 (2013.01); H01L 2224/29109 (2013.01); H01L 2224/29111 (2013.01); H01L 2224/29139 (2013.01); H01L 2224/29144 (2013.01); H01L 2224/29147 (2013.01); H01L 2224/29155 (2013.01); H01L 2224/29166 (2013.01); H01L 2224/29169 (2013.01); H01L 2224/29171 (2013.01); H01L 2224/29184 (2013.01); H01L 2924/014 (2013.01); H01L 2924/12041 (2013.01); H01L 2933/0016 (2013.01); H01L 2933/0025 (2013.01); H01L 2933/0058 (2013.01); H01L 2933/0066 (2013.01);
Abstract

A light emitting device and method of forming the same, the light emitting device including: a substrate, a buffer layer disposed on the substrate, a semiconductor mesa disposed on the buffer layer and including a first semiconductor layer, a light emitting active layer disposed on the first semiconductor layer, and a second semiconductor layer disposed on the first semiconductor layer, a contact layer disposed on an upper surface of the mesa, a passivation layer covering sidewalls of the mesa and the contact layer, and a cap structure including a reflective layer covering an upper surface of the contact layer, and a solder layer including a recess in which the reflective layer is disposed.


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