The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 12, 2019

Filed:

Feb. 11, 2015
Applicant:

Semicon Light Co., Ltd., Gyeonggi-do, KR;

Inventor:

Soo Kun Jeon, Gyeonggi-do, KR;

Assignee:

SEMICON LIGHT CO., LTD., Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/40 (2010.01); H01L 33/38 (2010.01); H01L 33/46 (2010.01); H01L 33/14 (2010.01); H01L 33/32 (2010.01);
U.S. Cl.
CPC ...
H01L 33/405 (2013.01); H01L 33/38 (2013.01); H01L 33/46 (2013.01); H01L 33/14 (2013.01); H01L 33/32 (2013.01); H01L 2933/0016 (2013.01); H01L 2933/0025 (2013.01);
Abstract

Disclosed is a semiconductor light emitting device, including: a plurality of semiconductor layers; a non-conductive reflective film coupled to the plurality of the semiconductor layers; and one or more electrodes formed on the non-conductive reflective film and electrically connected to the plurality of semiconductor layers, in which the one or more electrodes respectively include a lower electrode layer for reflecting light generated in the active layer and then passed the non-conductive reflective film, and an upper electrode layer arranged on the lower electrode layer for preventing a foreign material from penetrating into the lower electrode layer.


Find Patent Forward Citations

Loading…