The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 12, 2019
Filed:
Dec. 11, 2017
Applicant:
Toyoda Gosei Co., Ltd., Kiyosu-shi, JP;
Inventor:
Koji Okuno, Kiyosu, JP;
Assignee:
TOYODA GOSEI CO., LTD., Kiyosu-Shi, Aichi-Ken, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 31/00 (2006.01); H01L 33/12 (2010.01); H01L 33/38 (2010.01); H01L 33/06 (2010.01); H01L 33/20 (2010.01); H01L 33/00 (2010.01); H01L 33/32 (2010.01);
U.S. Cl.
CPC ...
H01L 33/12 (2013.01); H01L 33/06 (2013.01); H01L 33/20 (2013.01); H01L 33/38 (2013.01); H01L 33/007 (2013.01); H01L 33/32 (2013.01); H01L 2933/0016 (2013.01);
Abstract
There are provided a semiconductor structure exhibiting excellent crystallinity by preventing the occurrence of a strain, and a semiconductor device. The semiconductor structure comprises a substrate, a bridging portion bridged to the substrate, a semiconductor layer formed on the bridging portion, a void defined by the substrate and the bridging portion. The bridging portion has a plurality of through holes. The through holes are blocked with the semiconductor layer. Therefore, the semiconductor layer does not have a through hole.