The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 12, 2019

Filed:

May. 29, 2018
Applicant:

Kaneka Corporation, Osaka-shi, Osaka, JP;

Inventors:

Gensuke Koizumi, Settsu, JP;

Daisuke Adachi, Settsu, JP;

Kunihiro Nakano, Settsu, JP;

Assignee:

KANEKA CORPORATION, Osaka-shi, Osaka, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/02 (2006.01); H01L 31/04 (2014.01); H01L 31/05 (2014.01); H01L 31/18 (2006.01); H01L 31/0216 (2014.01); H01L 31/0224 (2006.01); H01L 31/0747 (2012.01);
U.S. Cl.
CPC ...
H01L 31/0504 (2013.01); H01L 31/02008 (2013.01); H01L 31/0224 (2013.01); H01L 31/02167 (2013.01); H01L 31/02245 (2013.01); H01L 31/022425 (2013.01); H01L 31/022441 (2013.01); H01L 31/022475 (2013.01); H01L 31/04 (2013.01); H01L 31/05 (2013.01); H01L 31/0747 (2013.01); H01L 31/1884 (2013.01); H01L 31/022433 (2013.01); Y02E 10/50 (2013.01);
Abstract

A method for manufacturing a solar cell comprises forming a first conductivity-type silicon-based thin-film on a first surface of a substrate; forming a second conductivity-type silicon-based thin-film different from the first conductivity-type silicon-based thin-film, on a second surface of the substrate that is opposite to the first surface of the substrate; forming a first transparent electrode layer on the first conductivity-type silicon-based thin-film; and forming a second transparent electrode layer on the second conductivity-type silicon-based thin-film; forming a first metal seed layer on a first transparent electrode layer; forming a second metal seed layer on a second transparent electrode layer; forming a third metal seed layer on a peripheral edge and on an end-edge of the second conductivity-type silicon-based thin-film; forming a first plating layer on the first metal seed layer and a third plating layer on the third metal seed layer simultaneously by an electroplating method.


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