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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10205030 B1

PDFFull Text
Date of Patent:
Feb. 12, 2019

Filed:

Oct. 03, 2017

Method for manufacturing semiconductor device

Applicant:

Semiconductor Energy Laboratory Co., Ltd., Atsugi-shi, Kanagawa-ken, JP;

Inventors:

Hidekazu Miyairi, Isehara, JP;

Kengo Akimoto, Atsugi, JP;

Yasuo Nakamura, Machida, JP;

Assignee:

Semiconductor Energy Laboratory Co., Ltd., Kanagawa-ken, JP;

Attorneys:

Robinson Intellectual Property Law Office

Eric J. Robinson

Primary Examiner:

Cheung Lee

Int. Cl.
CPC ...
H01L 29/786 (2006.01); H01L 27/12 (2006.01); H01L 29/26 (2006.01); H01L 29/66 (2006.01); H01L 21/02 (2006.01); H01L 21/465 (2006.01); H01L 21/467 (2006.01); H01L 21/4763 (2006.01); H01L 21/3213 (2006.01); H01L 29/06 (2006.01); H01L 29/10 (2006.01); H01L 29/24 (2006.01); H01L 29/423 (2006.01); H01L 29/49 (2006.01); H01L 29/51 (2006.01);
U.S. Cl.
CPC ...
H01L 29/78696 (2013.01); H01L 21/02323 (2013.01); H01L 21/02565 (2013.01); H01L 21/32139 (2013.01); H01L 21/465 (2013.01); H01L 21/467 (2013.01); H01L 21/4763 (2013.01); H01L 21/47635 (2013.01); H01L 27/1225 (2013.01); H01L 29/0692 (2013.01); H01L 29/1033 (2013.01); H01L 29/24 (2013.01); H01L 29/263 (2013.01); H01L 29/42364 (2013.01); H01L 29/42384 (2013.01); H01L 29/495 (2013.01); H01L 29/4908 (2013.01); H01L 29/513 (2013.01); H01L 29/518 (2013.01); H01L 29/66742 (2013.01); H01L 29/66969 (2013.01); H01L 29/7869 (2013.01); H01L 29/78606 (2013.01); H01L 29/78618 (2013.01); H01L 29/78633 (2013.01); H01L 29/78693 (2013.01);
Abstract

To provide a method by which a semiconductor device including a thin film transistor with excellent electric characteristics and high reliability is manufactured with a small number of steps. After a channel protective layer is formed over an oxide semiconductor film containing In, Ga, and Zn, a film having n-type conductivity and a conductive film are formed, and a resist mask is formed over the conductive film. The conductive film, the film having n-type conductivity, and the oxide semiconductor film containing In, Ga, and Zn are etched using the channel protective layer and gate insulating films as etching stoppers with the resist mask, so that source and drain electrode layers, a buffer layer, and a semiconductor layer are formed.

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