The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 12, 2019

Filed:

May. 09, 2016
Applicant:

Boe Technology Group Co., Ltd., Beijing, CN;

Inventor:

Hui Tian, Beijing, CN;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/49 (2006.01); H01L 29/51 (2006.01); H01L 29/66 (2006.01); H01L 29/786 (2006.01); H01L 21/283 (2006.01); H01L 29/40 (2006.01); H01L 21/28 (2006.01); H01L 29/423 (2006.01);
U.S. Cl.
CPC ...
H01L 29/78603 (2013.01); H01L 21/28 (2013.01); H01L 21/283 (2013.01); H01L 29/40 (2013.01); H01L 29/423 (2013.01); H01L 29/4908 (2013.01); H01L 29/51 (2013.01); H01L 29/66477 (2013.01); H01L 29/66613 (2013.01); H01L 29/66742 (2013.01); H01L 29/78 (2013.01); H01L 29/786 (2013.01);
Abstract

A thin film transistor includes a substrate, and, a source electrode, a drain electrode, a gate, a gate insulation layer and an active layer disposed on the substrate; the gate insulation layer is located between the gate and the active layer, and the source electrode and the drain electrode are connected to the active layer, respectively; and the gate is a composite metal layer including at least one first metal layer which contains doped ions therein and which is close to the gate insulation layer, and at least one second metal layer which is apart from the gate insulation layer and is not doped with ions.


Find Patent Forward Citations

Tian, Hui. (2019). Thin film transistor having a composite metal gate layer (U.S. Patent No. 10205026). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10205026

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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