The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 12, 2019
Filed:
Apr. 12, 2018
Renesas Electronics Corporation, Tokyo, JP;
Atsushi Amo, Tokyo, JP;
RENESAS ELECTRONICS CORPORATION, Tokyo, JP;
Abstract
A method of manufacturing a semiconductor device includes providing a semiconductor substrate including a main surface, the main surface including a first area and a second area, which is different from the first area in a plan view, forming a first trench in the main surface of the semiconductor substrate in the first area, after the forming the first trench, forming a first insulating film on a side wall surface and a bottom face of the first trench, and after the forming the first insulating film, forming a first conductor film over the semiconductor substrate in the first area and a second area to embed a portion of the first conductor film into the first trench through the first insulating film.