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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10205002 B1

PDFFull Text
Date of Patent:
Feb. 12, 2019

Filed:

Jan. 27, 2017

Method of epitaxial growth shape control for cmos applications

Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventors:

Xinyu Bao, Fremont, CA (US);

Chun Yan, San Jose, CA (US);

Errol Antonio C. Sanchez, Tracy, CA (US);

Hua Chung, San Jose, CA (US);

Assignee:

APPLIED MATERIALS, INC., Santa Clara, CA (US);

Attorney:

Patterson + Sheridan LLP

Primary Examiner:

Phat X Cao

Assistant Examiner:

Diana C Vieira

Int. Cl.
CPC ...
C23C 16/455 (2006.01); C30B 25/02 (2006.01); C30B 25/04 (2006.01); C30B 25/16 (2006.01); C30B 25/18 (2006.01); H01L 21/02 (2006.01); H01L 21/24 (2006.01); H01L 21/762 (2006.01); H01L 29/04 (2006.01); H01L 29/08 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66795 (2013.01); C23C 16/45523 (2013.01); C23C 16/45525 (2013.01); C30B 25/025 (2013.01); C30B 25/04 (2013.01); C30B 25/165 (2013.01); C30B 25/186 (2013.01); H01L 21/0243 (2013.01); H01L 21/0262 (2013.01); H01L 21/02381 (2013.01); H01L 21/02433 (2013.01); H01L 21/02532 (2013.01); H01L 21/02576 (2013.01); H01L 21/02579 (2013.01); H01L 21/02598 (2013.01); H01L 21/02609 (2013.01); H01L 21/02639 (2013.01); H01L 21/02658 (2013.01); H01L 21/24 (2013.01); H01L 21/76224 (2013.01); H01L 29/045 (2013.01); H01L 29/0847 (2013.01); H01L 29/785 (2013.01); H01L 29/7848 (2013.01); H01L 29/7853 (2013.01); H01L 29/7851 (2013.01);
Abstract

The present disclosure generally relate to methods of processing a substrate in an epitaxy chamber. The method includes exposing a substrate having one or more fins to a group IV-containing precursor and a surfactant containing antimony to form an epitaxial film over sidewalls of the one or more fin structures, wherein the surfactant containing antimony is introduced into the epitaxy chamber before epitaxial growth of the epitaxial film, and a molar ratio of the surfactant containing antimony to the group IV-containing precursor is about 0.0001 to about 10.

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