The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 12, 2019

Filed:

Sep. 27, 2017
Applicant:

Macom Technology Solutions Holdings, Inc., Lowell, MA (US);

Inventors:

Walter H. Nagy, Raleigh, NC (US);

Lyndon Pattison, Newtownabbey, IE;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H03H 11/28 (2006.01); H01L 29/20 (2006.01); H01L 29/778 (2006.01); H01L 29/267 (2006.01); H01L 23/528 (2006.01); H01L 27/088 (2006.01); H01L 23/532 (2006.01); H01L 49/02 (2006.01); H01L 23/64 (2006.01); H03F 1/56 (2006.01); H03F 3/191 (2006.01); H03F 3/193 (2006.01); H03F 3/20 (2006.01); H01L 23/00 (2006.01); G06F 17/50 (2006.01);
U.S. Cl.
CPC ...
H01L 29/2003 (2013.01); H01L 23/528 (2013.01); H01L 23/53242 (2013.01); H01L 23/64 (2013.01); H01L 23/642 (2013.01); H01L 24/45 (2013.01); H01L 27/088 (2013.01); H01L 28/60 (2013.01); H01L 29/267 (2013.01); H01L 29/778 (2013.01); H03F 1/56 (2013.01); H03F 3/191 (2013.01); H03F 3/193 (2013.01); H03F 3/20 (2013.01); H03H 11/28 (2013.01); G06F 17/5063 (2013.01); H01L 2224/45644 (2013.01); H01L 2224/49175 (2013.01); H03F 2200/222 (2013.01); H03F 2200/451 (2013.01); H03F 2200/75 (2013.01);
Abstract

Methods and structures for improving the performance of integrated semiconductor transistors operating at high frequency and/or high power are described. Two capacitors may be connected to an input of a semiconductor transistor and tuned to suppress second-harmonic generation and to transform and match the input impedance of the device. A two-stage tuning procedure is described. The transistor may comprise gallium nitride and may be configured as a power transistor capable of handling up to 1000 W of power. A tuned transistor may operate at frequencies up to 6 GHz with a peak drain efficiency greater than 60%.


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