The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 12, 2019
Filed:
Sep. 11, 2017
Applicant:
Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd., Shenzhen, Guangdong, CN;
Inventor:
Liwang Song, Guangdong, CN;
Assignee:
SHENZHEN CHINA STAR OPTOELECTRONICS SEMICONDUCTOR DISPLAY TECHNOLOGY CO., LTD., Shenzhen, Guangdong, CN;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/12 (2006.01); H01L 21/027 (2006.01); H01L 29/786 (2006.01); H01L 29/66 (2006.01); H01L 29/49 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1288 (2013.01); H01L 21/0274 (2013.01); H01L 27/127 (2013.01); H01L 27/1222 (2013.01); H01L 27/1225 (2013.01); H01L 29/4908 (2013.01); H01L 29/66757 (2013.01); H01L 29/66969 (2013.01); H01L 29/7869 (2013.01); H01L 29/78666 (2013.01);
Abstract
A method for manufacturing the top-gated thin film transistors is disclosed and includes forming a first photoresist pattern with a first shielding portion and two second shielding portions, and etching a gate metal layer by adopting the first photoresist pattern as a mask. Thus, a size of the gate pattern coincides with a size of a channel region of a conductive channel, to increase a control force of a gate to the conductive channel, thereby improving performance of device.