The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 12, 2019

Filed:

May. 20, 2016
Applicants:

Boe Technology Group Co., Ltd., Beijing, CN;

Hefei Xinsheng Optoelectronics Technology Co., Ltd., Hefei, CN;

Inventors:

Zhenfei Cai, Beijing, CN;

Qiangqiang Ji, Beijing, CN;

Guoquan Liu, Beijing, CN;

Zhengwei Chen, Beijing, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G02F 1/136 (2006.01); H01L 27/12 (2006.01); G02F 1/1333 (2006.01); G02F 1/1343 (2006.01); G02F 1/1362 (2006.01); G02F 1/1368 (2006.01);
U.S. Cl.
CPC ...
H01L 27/124 (2013.01); G02F 1/1368 (2013.01); G02F 1/13439 (2013.01); G02F 1/133345 (2013.01); G02F 1/134309 (2013.01); G02F 1/136227 (2013.01); G02F 1/136286 (2013.01); H01L 27/1248 (2013.01); H01L 27/1259 (2013.01); G02F 2001/136295 (2013.01); G02F 2201/121 (2013.01); G02F 2201/123 (2013.01);
Abstract

The present application discloses a display substrate comprising a base substrate; a first electrode on the base substrate; a first insulating layer on a side of the first electrode distal to the base substrate; a thin film transistor on a side of the first insulating layer distal to the first electrode; a second insulating layer on a side of the thin film transistor distal to the first insulating layer; an organic layer on a side of the second insulating layer distal to the thin film transistor; and a second electrode on a side of the organic layer distal to the second insulating layer.


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