The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 12, 2019
Filed:
Aug. 31, 2016
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Byoung Il Lee, Seoul, KR;
Joong Shik Shin, Yongin-si, KR;
Dong Seog Eun, Seongnam-si, KR;
Kyung Jun Shin, Seoul, KR;
Hyun Kook Lee, Suwon-si, KR;
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, Gyeonggi-Do, KR;
Abstract
A vertical memory device is provided as follows. A substrate has a cell array region and a connection region adjacent to the cell array region. A first gate stack includes gate electrode layers spaced apart from each other in a first direction perpendicular to the substrate. The gate electrode layers extends from the cell array region to the connection region in a second direction perpendicular to the first direction to form a first stepped structure on the connection region. The first stepped structure includes a first gate electrode layer and a second gate electrode layer sequentially stacked. The second gate electrode layer includes a first region having the same length as a length of the first gate electrode layer and a second region having a shorter length than the length of the first gate electrode layer.