The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 12, 2019
Filed:
Aug. 18, 2017
Wuhan China Star Optoelectronics Semiconductor Display Technology Co., Ltd., Wuhan, CN;
Xuanyun Wang, Wuhan, CN;
WUHAN CHINA STAR OPTOELECTRONICS SEMICONDUCTOR DISPLAY TECHNOLOGY CO., LTD., Wuhan, Hubei, CN;
Abstract
The invention provides a method for improving threshold voltage of oxide semiconductor TFT, by bending the oxide semiconductor TFT for a default number of times or bending the oxide semiconductor TFT for a default duration, by bending the oxide semiconductor TFT to compress or stretch the oxide semiconductor layer to change the distance among the atoms in the channel of the oxide semiconductor TFT so as to change the energy difference between the inter-atom bonding orbital and anti-bonding orbital, resulting in controlling the threshold voltage of the oxide semiconductor TFT within a proper range to achieve improving the threshold voltage of the oxide semiconductor TFT.