The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 12, 2019
Filed:
Mar. 30, 2017
Applicant:
Commissariat a L'energie Atomique ET Aux Energies Alternatives, Paris, FR;
Inventors:
Patrick Reynaud, Murianette, FR;
Xavier Baillin, Crolles, FR;
Emmanuel Rolland, Jarrie, FR;
Aurelie Thuaire, Voiron, FR;
Assignee:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/225 (2006.01); H01L 21/324 (2006.01); H01L 21/265 (2006.01); G01N 27/414 (2006.01); H01L 51/00 (2006.01); H01L 51/05 (2006.01); H01L 23/48 (2006.01);
U.S. Cl.
CPC ...
H01L 21/2253 (2013.01); G01N 27/4146 (2013.01); H01L 21/26513 (2013.01); H01L 21/324 (2013.01); H01L 51/002 (2013.01); H01L 51/0595 (2013.01); H01L 23/481 (2013.01); H01L 51/0047 (2013.01); H01L 51/0093 (2013.01);
Abstract
Manufacturing of a device to connect at least one nano-object to an external electrical system, comprising a support provided with a semiconducting layer in which the first doped zones are formed at a spacing from each other, an external electrical system being connectable to the first doped zones, each first doped zone (8, 8) being in contact with a second doped zone on which a portion of the nano-object is located, the second doped zones being separated from each other and with a thickness less than the thickness of the first doped zones.