The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 12, 2019

Filed:

Aug. 12, 2015
Applicant:

Boe Technology Group Co., Ltd., Beijing, CN;

Inventors:

Wei Liu, Beijing, CN;

Chunsheng Jiang, Beijing, CN;

Assignee:
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/20 (2006.01); H01L 21/02 (2006.01); H01L 29/49 (2006.01); H01L 29/40 (2006.01); H01L 29/66 (2006.01); H01L 29/786 (2006.01); H01L 29/45 (2006.01); H01L 29/51 (2006.01); H01L 27/12 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02614 (2013.01); H01L 21/02565 (2013.01); H01L 29/408 (2013.01); H01L 29/45 (2013.01); H01L 29/4908 (2013.01); H01L 29/66969 (2013.01); H01L 29/7869 (2013.01); H01L 27/1225 (2013.01); H01L 29/513 (2013.01); H01L 29/517 (2013.01); H01L 29/518 (2013.01);
Abstract

The present invention provides a thin film transistor and a manufacturing method thereof, an array substrate comprising the thin film transistor and a manufacturing method thereof, and a display apparatus comprising the array substrate. The manufacturing method of the thin film transistor comprises steps of forming a gate, a gate insulating layer, a semiconductor active layer, a source and a drain on a substrate, wherein the steps of forming the gate insulating layer and the semiconductor active layer comprise: preparing an insulating film, the insulating film comprises metal oxide insulating material; performing ion implantation on a predefined region of the insulating film, so that the metal oxide insulating material of partial-thickness of the insulating film in the predefined region is transformed into metal oxide semiconductor material to form the semiconductor active layer, and the rest of the insulating film forms the gate insulating layer.


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