The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 12, 2019
Filed:
Mar. 22, 2017
New York University, New York, NY (US);
Bar-ilan University, Ramat Gan, IL;
Lior Klein, Ramat Gan, IL;
Yevgeniy Telepinsky, Ramat Gan, IL;
Mordechai Schultz, Ramat Gan, IL;
Andrew David Kent, New York, NY (US);
Yu-Ming Hung, New York, NY (US);
NEW YORK UNIVERSITY, New York, NY (US);
BAR-ILAN UNIVERSITY, Ramat Gan, IL;
Abstract
A multi-state MRAM device comprises N overlapping ovals defining a free ferromagnetic region. The size of the free ferromagnetic region is controlled the shape anisotropy of the configuration via at least a aspect ratio greater than 2, of the free ferromagnetic region. The free ferromagnetic region has a magnetic moment spontaneously aligned along the long axis in each oval outside the center region. A center magnetic moment has a multitude of exactly 2*N stable orientations determined by the magnetic moments in the segments of the ovals outside the center region. An embodiment is an MRAM device using tunneling junctions to achieve a multi-state memory configuration. Certain embodiments includes an electrically conducting heavy-metal layer disposed adjacent to and connected with the free ferromagnetic region. Some embodiments include a topological insulating material, such as BiSe. Magnetic moment reversal in the ovals may be determined by spin-transfer torque associated with the electrically conducting layer.