The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 12, 2019

Filed:

Jul. 06, 2016
Applicant:

The University of North Carolina AT Charlotte, Charlotte, NC (US);

Inventors:

Raphael Tsu, Huntersville, NC (US);

Michael Fiddy, Huntersville, NC (US);

Tsinghua Her, Charlotte, NC (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G02F 1/015 (2006.01); H01L 33/06 (2010.01); H01L 33/30 (2010.01); H01L 33/32 (2010.01); H01L 33/00 (2010.01); G02B 5/00 (2006.01); H02S 40/44 (2014.01);
U.S. Cl.
CPC ...
G02F 1/015 (2013.01); G02B 5/008 (2013.01); H01L 33/0062 (2013.01); H01L 33/0075 (2013.01); H01L 33/06 (2013.01); H01L 33/30 (2013.01); H01L 33/32 (2013.01); H02S 40/44 (2014.12);
Abstract

A semiconductor junction may include a first layer and a second layer. The first layer may include a first semiconductor material and the second layer may be deposited on the first layer and may include a second material. The valence band maximum of the second material is higher than a conduction band minimum of the first semiconductor material, thereby allowing a flow of a majority of free carriers across the semiconductor junction between the first and second layers to be diffusive.


Find Patent Forward Citations

Tsu, Raphael. (2019). Type iii hetrojunction—broken gap hj (U.S. Patent No. 10203526). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10203526

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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