The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 12, 2019
Filed:
Oct. 15, 2012
Gtat Ip Holding Llc, Merrimack, NH (US);
William L. Luter, St. Charles, MO (US);
Verlin A. Lauher, Baldwin, MO (US);
Dick S. Williams, St. Charles, MO (US);
Howard P. Zinschlag, Chesterfield, MO (US);
Neil Middendorf, St. Louis, MO (US);
David J. Dubiel, Goffstown, NH (US);
GTAT IP HOLDING LLC, Merrimack, NH (US);
Abstract
A Czochralski growth system is described comprising a growth chamber, a feed port, and a feed chamber comprising a container for feedstock and a feeder. The feed port is disposed in at least one side wall of the growth chamber, and the feed chamber is attached to the growth chamber at the feed port. The feeder is insertable into the growth chamber through the feed port and supplies the feedstock into the growth chamber. Preferably this system can be used for producing silicon ingots using a continuous Czochralski method.