The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 12, 2019

Filed:

May. 28, 2013
Applicant:

Jusung Engineering Co., Ltd., Gwangju-si, Gyeonggi-do, KR;

Inventors:

Chul Joo Hwang, Seongnam-si, KR;

Jeung Hoon Han, Gwangju-si, KR;

Young Hoon Kim, Uiwang-si-si, KR;

Seung Hoon Seo, Gwangju-si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 16/54 (2006.01); H01L 21/67 (2006.01); H01J 37/32 (2006.01); C23C 16/50 (2006.01); C23C 16/455 (2006.01); C23C 16/458 (2006.01); C23C 16/509 (2006.01); H01L 21/285 (2006.01); H01L 21/3205 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
C23C 16/50 (2013.01); C23C 16/455 (2013.01); C23C 16/458 (2013.01); C23C 16/4584 (2013.01); C23C 16/45536 (2013.01); C23C 16/45544 (2013.01); C23C 16/45551 (2013.01); C23C 16/45563 (2013.01); C23C 16/45574 (2013.01); C23C 16/509 (2013.01); C23C 16/5096 (2013.01); H01J 37/3244 (2013.01); H01J 37/32082 (2013.01); H01J 37/32532 (2013.01); H01L 21/28556 (2013.01); H01L 21/32051 (2013.01); C23C 16/54 (2013.01); H01J 37/32752 (2013.01); H01L 21/0262 (2013.01); H01L 21/02532 (2013.01); H01L 21/67155 (2013.01);
Abstract

Disclosed is an apparatus and method of processing substrate, which facilitates to improve deposition uniformity of a thin film deposited on a substrate, and to control quality of a thin film, wherein the apparatus includes a process chamber; a substrate supporter for supporting at least one of substrates, wherein the substrate supporter is provided in the bottom of the process chamber; a chamber lid confronting the substrate supporter, the chamber lid for covering an upper side of the process chamber; and a gas distributor for locally distributing activated source gas on the substrate, wherein the gas distributor locally confronting the substrate supporter is provided in the chamber lid, wherein the gas distributor forms plasma by the use of plasma formation gas, and activates the source gas by distributing the source gas to some of plasma area for formation of the plasma.


Find Patent Forward Citations

Hwang, Chul. (2019). Substrate treating apparatus and method (U.S. Patent No. 10202690). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10202690

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Loading…