The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 12, 2019

Filed:

Jun. 05, 2014
Applicant:

Samsung Display Co., Ltd., Yongin, Gyeonggi-Do, KR;

Inventors:

Yong-Suk Lee, Yongin, KR;

Min-Sung Seo, Yongin, KR;

Myung-Soo Huh, Yongin, KR;

Mi-Ra An, Yongin, KR;

Assignee:

SAMSUNG DISPLAY CO., LTD., Yongin, Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 14/56 (2006.01); C23C 16/54 (2006.01); H01L 21/67 (2006.01); H01L 51/52 (2006.01);
U.S. Cl.
CPC ...
C23C 14/568 (2013.01); C23C 16/54 (2013.01); H01L 21/67184 (2013.01); H01L 21/67207 (2013.01); H01L 51/5256 (2013.01);
Abstract

A thin film encapsulation layer manufacturing apparatus is provided that may include a transfer chamber, a sputtering chamber, a monomer deposition chamber, a chemical vapor deposition (CVD) chamber, and an atomic layer deposition (ALD) chamber. The transfer chamber may be connected to each of the other chambers, and may be configured to align a substrate. Each of the other chambers may be configured to receive from and transfer to the transfer chamber a substrate. The sputtering chamber may be configured to form a first inorganic layer on the substrate by a sputtering process. The monomer deposition chamber may be configured to deposit a first organic layer on the first inorganic layer. The CVD chamber may be configured to form a second inorganic layer on the first organic layer. The ALD chamber may be configured to form a third inorganic layer on the second inorganic layer.


Find Patent Forward Citations

Loading…