The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 12, 2019
Filed:
Aug. 11, 2015
Applicant:
University of Virginia Patent Foundation, Charlottesville, VA (US);
Inventors:
Mool Gupta, Yorktown, VA (US);
Ankit Shah, Charlottesville, VA (US);
Assignee:
University of Virginia Patent Foundation, Charlottesville, VA (US);
Primary Examiner:
Int. Cl.
CPC ...
B32B 1/08 (2006.01); C23C 24/08 (2006.01); C23C 24/10 (2006.01); C23C 24/00 (2006.01); C23C 28/00 (2006.01); G02B 1/113 (2015.01); H02S 40/22 (2014.01); H02S 10/30 (2014.01); B22F 1/00 (2006.01); B22F 3/105 (2006.01); B22F 3/24 (2006.01); F24S 70/25 (2018.01); F24S 70/20 (2018.01); F24S 20/20 (2018.01);
U.S. Cl.
CPC ...
B32B 1/08 (2013.01); B22F 1/0018 (2013.01); B22F 1/0062 (2013.01); B22F 3/1055 (2013.01); B22F 3/24 (2013.01); C23C 24/00 (2013.01); C23C 24/08 (2013.01); C23C 24/087 (2013.01); C23C 24/103 (2013.01); C23C 24/106 (2013.01); C23C 28/30 (2013.01); C23C 28/32 (2013.01); C23C 28/321 (2013.01); C23C 28/3215 (2013.01); C23C 28/3455 (2013.01); F24S 20/20 (2018.05); F24S 70/20 (2018.05); F24S 70/25 (2018.05); G02B 1/113 (2013.01); H02S 10/30 (2014.12); H02S 40/22 (2014.12); B22F 2999/00 (2013.01); Y02E 10/41 (2013.01); Y02E 10/52 (2013.01); Y02P 10/295 (2015.11);
Abstract
A method of forming a spectral selective coating is disclosed. The method may include providing particles on a substrate, wherein the particles include submicron particles. The method may farther include sintering the particles under atmospheric pressure to form a sintered layer an the substrate and texturing the sintered layer to provide a submicron surface roughness height on the sintered layer.