The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 12, 2019

Filed:

Jun. 02, 2016
Applicant:

Dow Global Technologies Llc, Midland, MI (US);

Inventors:

Roland Bayer, Walsrode, DE;

Anette Wagner, Walsrode, DE;

Aleksander J. Pyzik, Midland, MI (US);

Sharon Allen, Midland, MI (US);

Assignee:

Dow Global Technologies LLC, Midland, MI (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B29C 64/40 (2017.01); B33Y 70/00 (2015.01); B33Y 10/00 (2015.01); C09D 101/28 (2006.01); C08L 1/28 (2006.01); B29K 1/00 (2006.01); B29K 101/12 (2006.01);
U.S. Cl.
CPC ...
B29C 64/40 (2017.08); B33Y 70/00 (2014.12); C08L 1/284 (2013.01); C09D 101/284 (2013.01); B29K 2001/08 (2013.01); B29K 2101/12 (2013.01); B29K 2995/0062 (2013.01); B33Y 10/00 (2014.12);
Abstract

A three-dimensionally printed article is comprised of a hydroxyethyl methylcellulose (HEMC) having a DS of 1.7 to 2.5 and an MS of at least 0.5, wherein DS is the degree of substitution of methoxyl groups and MS is the molar substitution of hydroxyethoxyl groups. The HEMC may advantageously be used as a support material when making a three-dimensionally printed article using a build material such as a different thermoplastic polymer such as a poly(acrylonitrile-butadiene-styrene), polylactic acid, polyethylene and polyprophylene. When the HEMC is a support material it may be easily removed from the build material by contacting the three dimensionally printed article with water, which may be at ambient temperatures and a pH that is neutral or close to neutral.


Find Patent Forward Citations

Loading…