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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10199548 B1

PDFFull Text
Date of Patent:
Feb. 05, 2019

Filed:

Mar. 16, 2016

Photosensitive resin composition for thin film transistors, cured film, thin film transistor, liquid crystal display device or organic electroluminescent display device, method for producing cured film, method for manufacturing thin film transistor, and method for manufacturing liquid crystal display device or organic electroluminescent display device

Applicant:

Toray Industries, Inc., Tokyo, JP;

Inventors:

Satoshi Kamemoto, Otsu, JP;

Yusuke Komori, Otsu, JP;

Kazuto Miyoshi, Otsu, JP;

Assignee:

TORAY INDUSTRIES, INC., Tokyo, JP;

Attorney:

Birch, Stewart, Kolasch & Birch, LLP

Primary Examiner:

Calvin Lee

Int. Cl.
CPC ...
H01L 33/56 (2010.01); H01L 27/12 (2006.01); H01L 29/786 (2006.01); H01L 51/05 (2006.01); G02F 1/1333 (2006.01); G03F 7/004 (2006.01); G03F 7/022 (2006.01); G03F 7/023 (2006.01); G03F 7/075 (2006.01); G03F 7/40 (2006.01); H01L 23/58 (2006.01);
U.S. Cl.
CPC ...
H01L 33/56 (2013.01); G02F 1/133345 (2013.01); G03F 7/0048 (2013.01); G03F 7/0226 (2013.01); G03F 7/0233 (2013.01); G03F 7/0755 (2013.01); G03F 7/40 (2013.01); H01L 27/1248 (2013.01); H01L 29/786 (2013.01); H01L 51/05 (2013.01); G02F 1/133305 (2013.01);
Abstract

The purpose of the present invention is to provide a photosensitive resin composition for thin film transistors, a cured film of which generates an extremely small amount of an outgas, and which is capable of forming an insulating layer for thin film transistors having excellent drive performance. In order to achieve the above-described purpose, the present invention has the configuration described below. Namely, a photosensitive resin composition for thin film transistors, which contains (A) an alkali-soluble resin having an amide group and/or an imide group, (B) a photosensitive compound and (C) organic solvents, and wherein the content of an organic solvent having nitrogen atoms in the organic solvents (C) is 1% by mass or less relative to the total mass of the organic solvents.

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