The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 05, 2019

Filed:

Jan. 26, 2018
Applicant:

Seoul Viosys Co., Ltd, Gyeonggi-do, KR;

Inventors:

Ki Yon Park, Ansan-si, KR;

Yu Dae Han, Ansan-si, KR;

Assignee:

SEOUL VIOSYS CO., LTD., Ansan-si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/02 (2010.01); H01L 33/04 (2010.01); H01L 33/06 (2010.01); H01L 33/14 (2010.01); H01L 33/32 (2010.01);
U.S. Cl.
CPC ...
H01L 33/14 (2013.01); H01L 33/025 (2013.01); H01L 33/06 (2013.01); H01L 33/325 (2013.01); H01L 33/04 (2013.01); H01L 33/32 (2013.01);
Abstract

A UV light emitting device is disclosed. The UV light emitting device includes: a substrate; an n-type semiconductor layer disposed on the substrate; an active layer disposed on then-type semiconductor layer; a hole injection layer disposed on the active layer and comprising Al; an Al-delta layer disposed on the hole injection layer and comprising Al; and a first p-type contact layer disposed on the Al-delta layer and having a higher doping concentration of p-type dopants than the hole injection layer, wherein the first p-type contact layer has a lower Al content than the hole injection layer, a band-gap of the first p-type contact layer is lower than or equal to energy of light emitted from the active layer, and the Al-delta layer has a higher Al content than the hole injection layer and allows holes to enter the active layer by tunneling therethrough.


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