The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 05, 2019

Filed:

Feb. 23, 2016
Applicant:

Lg Innotek Co., Ltd., Seoul, KR;

Inventor:

Hae Jin Park, Seoul, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/36 (2010.01); H01L 33/00 (2010.01); H01L 33/06 (2010.01); H01L 33/12 (2010.01); H01L 33/32 (2010.01); H01L 33/60 (2010.01); H01L 33/14 (2010.01); H01L 33/46 (2010.01); H01L 33/48 (2010.01);
U.S. Cl.
CPC ...
H01L 33/0025 (2013.01); H01L 33/06 (2013.01); H01L 33/12 (2013.01); H01L 33/14 (2013.01); H01L 33/32 (2013.01); H01L 33/36 (2013.01); H01L 33/60 (2013.01); H01L 33/145 (2013.01); H01L 33/46 (2013.01); H01L 33/486 (2013.01);
Abstract

The present embodiments disclose a light emitting device. The light emitting device disclosed includes a first conductive semiconductor layer; an active layer that is disposed on a first conductive semiconductor layer and generates ultraviolet wavelength; an electron blocking layer that is disposed on the active layer; a second conductive semiconductor layer that is disposed on the electron blocking layer; a third conductive semiconductor layer that is disposed on the second conductive semiconductor layer; and an electrode that is disposed on the third conductive semiconductor layer, in which the second and third conductive semiconductor layers include an AlGaN semiconductor, and in which the third conductive semiconductor layer has a lower aluminum composition than that of the second conductive semiconductor layer and has an electrical contact resistance with the electrode that is lower than that of the second conductive semiconductor layer.


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