The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 05, 2019

Filed:

Dec. 22, 2015
Applicants:

Karin Chaudhari, Briarcliff Manor, NY (US);

Ashok Chaudhari, Briarcliff Manor, NY (US);

Pia Chaudhari, Briarcliff Manor, NY (US);

Inventors:

Praveen Chaudhari, Briarcliff Manor, NY (US);

Ashok Chaudhari, Briarcliff Manor, NY (US);

Assignee:

Solar-Tectic, LLC, Briarcliff Manor, NY (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 31/18 (2006.01); C30B 11/12 (2006.01); C30B 29/06 (2006.01); C30B 23/02 (2006.01); C30B 25/02 (2006.01); C30B 25/18 (2006.01); C30B 19/00 (2006.01); C30B 29/52 (2006.01);
U.S. Cl.
CPC ...
H01L 31/1804 (2013.01); C30B 11/12 (2013.01); C30B 19/00 (2013.01); C30B 23/025 (2013.01); C30B 25/02 (2013.01); C30B 25/183 (2013.01); C30B 29/06 (2013.01); C30B 29/52 (2013.01); H01L 21/0262 (2013.01); H01L 21/02422 (2013.01); H01L 21/02488 (2013.01); H01L 21/02491 (2013.01); H01L 21/02532 (2013.01); H01L 21/02603 (2013.01); H01L 21/02645 (2013.01); H01L 21/02653 (2013.01); H01L 31/1836 (2013.01); H01L 31/1852 (2013.01); Y02E 10/544 (2013.01); Y02E 10/547 (2013.01); Y02P 70/521 (2015.11);
Abstract

A method is disclosed for making semiconductor films from a eutectic alloy comprising a metal and a semiconductor. Through heterogeneous nucleation said film is deposited at a deposition temperature on flexible substrates, such as glass. Specifically said film is vapor deposited at a fixed temperature in said deposition temperature where said deposition temperature is above a eutectic temperature of said eutectic alloy and below a temperature at which the substrate softens. Such films are nearly to entirely free of metal impurities and have widespread application in the manufacture and benefit of photovoltaic and display technologies.


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