The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 05, 2019
Filed:
May. 25, 2016
Nippon Telegraph and Telephone Corporation, Tokyo, JP;
Masahiro Nada, Tokyo, JP;
Kenji Kurishima, Tokyo, JP;
Shinji Matsuo, Tokyo, JP;
Hideaki Matsuzaki, Tokyo, JP;
NIPPON TELEGRAPH AND TELEPHONE CORPORATION, Tokyo, JP;
Abstract
A light-receiving element () according to the present invention includes a semiconductor layer () including a p-type semiconductor region (), an n-type semiconductor region (), and a multiplication region (), and a p-type light absorption layer () formed on the multiplication region. The p-type semiconductor region and the n-type semiconductor region are formed to sandwich the multiplication region in a planar direction of the semiconductor layer. This allows an easy implementation of a light-receiving element that serves as an avalanche photodiode by a monolithic manufacturing process.