The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 05, 2019

Filed:

Sep. 29, 2016
Applicant:

Sunpower Corporation, San Jose, CA (US);

Inventors:

David Fredric Joel Kavulak, Fremont, CA (US);

Gabriel Harley, Mountain View, CA (US);

Thomas P. Pass, San Jose, CA (US);

Assignee:

SunPower Corporation, San Jose, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 31/0368 (2006.01); H01L 31/0475 (2014.01); H01L 31/0224 (2006.01); H01L 31/028 (2006.01); H01L 31/0745 (2012.01); H01L 31/18 (2006.01);
U.S. Cl.
CPC ...
H01L 31/03682 (2013.01); H01L 31/028 (2013.01); H01L 31/022425 (2013.01); H01L 31/022441 (2013.01); H01L 31/0475 (2014.12); H01L 31/0745 (2013.01); H01L 31/1804 (2013.01); Y02E 10/547 (2013.01); Y02P 70/521 (2015.11);
Abstract

Approaches for the foil-based metallization of solar cells and the resulting solar cells are described. A method involves patterning a first surface of a metal foil to provide a plurality of alternating grooves and ridges in the metal foil. Non-conductive material regions are formed in the grooves in the metal foil. The metal foil is located above a plurality of alternating N-type and P-type semiconductor regions disposed in or above a substrate to provide the non-conductive material regions in alignment with locations between the alternating N-type and P-type semiconductor regions and to provide the ridges in alignment with the alternating N-type and P-type semiconductor regions. The ridges of the metal foil are adhered to the alternating N-type and P-type semiconductor regions. The metal foil is patterned through the metal foil from a second surface of the metal foil at regions in alignment with the non-conductive material regions.


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