The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 05, 2019
Filed:
Jun. 05, 2018
Applicant:
Raytheon Company, Waltham, MA (US);
Inventors:
Edward P. Smith, Santa Barbara, CA (US);
Borys P. Kolasa, Santa Barbara, CA (US);
Paul M. Alcorn, Groton, MA (US);
Assignee:
Raytheon Company, Waltham, MA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/14 (2006.01); H01L 31/0352 (2006.01); H01L 31/09 (2006.01); H01L 31/101 (2006.01);
U.S. Cl.
CPC ...
H01L 31/0352 (2013.01); H01L 31/09 (2013.01); H01L 31/101 (2013.01);
Abstract
A photodetector structure having a barrier layer disposed between a pair of like-conductively doped semiconductor layers, the barriers layer having a surface area smaller than the surface area of the upper one of the pair of semiconductor layers. A fill material is disposed between outer peripheral edges of the barrier layer and a region between outer peripheral edges of the first and second layers.