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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10199518 B1

PDFFull Text
Date of Patent:
Feb. 05, 2019

Filed:

Mar. 13, 2017

Methods of growing heteroepitaxial single crystal or large grained semiconductor films and devices thereon

Applicants:

Karin Chaudhari, Briarcliff Manor, NY (US);

Ashok Chaudhari, Briarcliff Manor, NY (US);

Pia Chaudhari, Briarcliff Manor, NY (US);

Inventors:

Praveen Chaudhari, Briarcliff Manor, NY (US);

Ashok Chaudhari, Briarcliff Manor, NY (US);

Assignee:

Solar-Tectic LLC, Briarcliff Manor, NY (US);

Attorneys:

Danielle C. Sullivan

Carter Ledyard & Milburn LLP

Primary Examiner:

Matthew J Song

Int. Cl.
CPC ...
C30B 25/02 (2006.01); H01L 31/0236 (2006.01); H01L 31/0687 (2012.01); H01L 31/18 (2006.01); H01G 9/20 (2006.01); C30B 23/02 (2006.01); C30B 29/52 (2006.01); C30B 19/00 (2006.01); C30B 25/18 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 31/02363 (2013.01); C30B 19/00 (2013.01); C30B 23/025 (2013.01); C30B 25/02 (2013.01); C30B 25/183 (2013.01); C30B 29/52 (2013.01); H01G 9/2009 (2013.01); H01L 21/0242 (2013.01); H01L 21/0262 (2013.01); H01L 21/02422 (2013.01); H01L 21/02488 (2013.01); H01L 21/02491 (2013.01); H01L 21/02532 (2013.01); H01L 21/02603 (2013.01); H01L 21/02645 (2013.01); H01L 21/02653 (2013.01); H01L 31/0687 (2013.01); H01L 31/1804 (2013.01); H01L 31/1836 (2013.01); H01L 31/1852 (2013.01); Y02E 10/544 (2013.01); Y02E 10/547 (2013.01);
Abstract

A method is provided for making smooth crystalline semiconductor thin-films and hole and electron transport films for solar cells and other electronic devices. Such semiconductor films have an average roughness of 3.4 nm thus allowing for effective deposition of additional semiconductor film layers such as perovskites for tandem solar cell structures which require extremely smooth surfaces for high quality device fabrication.

Find Patent Forward Citations

Chaudhari, Praveen. (2019). Methods of growing heteroepitaxial single crystal or large grained semiconductor films and devices thereon (U.S. Patent No. 10199518). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10199518

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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