The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 05, 2019
Filed:
Aug. 12, 2015
Boe Technology Group Co., Ltd., Beijing, CN;
Xuyuan Li, Beijing, CN;
BOE TECHNOLOGY GROUP CO., LTD., Beijing, CN;
Abstract
The present disclosure relates to a thin film transistor, a method for manufacturing a thin film transistor and an array substrate. The thin film transistor comprises an active layer, a source and a drain, the source comprising a source first conductive layer and a source first buffer layer, the drain comprising a drain first conductive layer and a drain first buffer layer; at least a part of an upper surface of the source first buffer layer and at least a part of an upper surface of the drain first buffer layer being in contact with a lower surface of the active layer, at least a part of a side wall of the source first conductive layer and at least a part of a side wall of the drain first conductive layer being in contact with the active layer, the side wall of the source first conductive layer and the side wall of the drain first conductive layer in contact with the active layer being formed with an oxide layer. The composition of the active layer of the above thin film transistor would not be damaged by the source first conductive layer and the drain first conductive layer, in which way higher electron mobility can be guaranteed for the thin film transistor, and the thin film transistor is maintained in a good electric property and stability.