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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10199496 B1

PDFFull Text
Date of Patent:
Feb. 05, 2019

Filed:

Jan. 20, 2017

Semiconductor device capable of high-voltage operation

Applicant:

Mediatek Inc., Hsin-Chu, TW;

Inventors:

Cheng-Hua Lin, Hsinchu, TW;

Yan-Liang Ji, Hsinchu, TW;

Chih-Wen Hsiung, Hsinchu, TW;

Assignee:

MEDIATEK INC., Hsin-Chu, TW;

Attorney:

McClure, Qualey & Rodack, LLP

Primary Examiner:

Nicholas J Tobergte

Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/06 (2006.01); H01L 29/10 (2006.01); H01L 29/423 (2006.01); H01L 29/66 (2006.01); H01L 29/40 (2006.01); H01L 27/06 (2006.01); H01L 49/02 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7817 (2013.01); H01L 27/0629 (2013.01); H01L 28/60 (2013.01); H01L 29/0649 (2013.01); H01L 29/1095 (2013.01); H01L 29/402 (2013.01); H01L 29/42376 (2013.01); H01L 29/66681 (2013.01); H01L 29/7816 (2013.01); H01L 29/7831 (2013.01);
Abstract

A semiconductor device capable of high-voltage operation includes a semiconductor substrate, a first well region, a second well region, a first gate structure, a first doped region, a second doped region, and a second gate structure. The first well region is formed in a portion of the semiconductor substrate. The second well region is formed in a portion of the first well region. The first gate structure is formed over a portion of the second well region and a portion of the first well region. The first doped region is formed in a portion of the second well region. The second doped region is formed in a portion of the first well region. The second gate structure is formed over a portion of the first gate structure, a portion of the first well region, and a portion of the second doped region.

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