The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 05, 2019
Filed:
Jun. 19, 2017
Applicant:
Shindengen Electric Manufacturing Co., Ltd., Chiyoda-ku, JP;
Inventors:
Assignee:
SHINDENGEN ELECTRIC MANUFACTURING CO., LTD., Chiyoda-ku, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/778 (2006.01); H01L 29/66 (2006.01); H02M 3/335 (2006.01); H01L 23/528 (2006.01); H01L 29/20 (2006.01);
U.S. Cl.
CPC ...
H01L 29/778 (2013.01); H01L 23/528 (2013.01); H01L 29/2003 (2013.01); H01L 29/66431 (2013.01); H02M 3/335 (2013.01);
Abstract
A semiconductor deviceof an embodiment is provided, including an insulating substrate, conductive pattern parts, andformed on the insulating substrate, a GaN-HEMIdisposed on the conductive pattern part, and a GaN-HEMTdisposed on the conductive pattern part, wherein an imaginary line Lof the GaN-HEMTand an imaginary line Lof the GaN-HEMTintersect each other, a GaN gate electrodeof the GaN-HEMTis electrically connected to the conductive pattern partvia a metal wire, and the metal wireis perpendicular to a sideof the GaN-HEMTand a conductive pattern sideS of the conductive pattern part