The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 05, 2019
Filed:
Jan. 20, 2017
Renesas Electronics Corporation, Koutou-ku, Tokyo, JP;
Nao Nagata, Tokyo, JP;
RENESAS ELECTRONICS CORPORATION, Tokyo, JP;
Abstract
An improvement is achieved in the performance of a semiconductor device. The semiconductor device includes a first trench gate electrode and second and third trench gate electrodes located on both sides of the first trench gate electrode interposed therebetween. In each of a semiconductor layer located between the first and second trench gate electrodes and the semiconductor layer located between the first and third trench gate electrodes, a plurality of p-type semiconductor regions are formed. The p-type semiconductor regions are arranged along the extending direction of the first trench gate electrode in plan view to be spaced apart from each other.