The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 05, 2019
Filed:
Mar. 25, 2015
Applicant:
Sony Corporation, Tokyo, JP;
Inventor:
Katsuhiko Takeuchi, Kanagawa, JP;
Assignee:
Sony Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H04B 7/00 (2006.01); H01L 29/423 (2006.01); H01L 29/778 (2006.01); H01L 29/10 (2006.01); H01L 29/417 (2006.01); H04B 1/44 (2006.01);
U.S. Cl.
CPC ...
H01L 29/4238 (2013.01); H01L 29/1066 (2013.01); H01L 29/41758 (2013.01); H01L 29/42316 (2013.01); H01L 29/42376 (2013.01); H01L 29/7785 (2013.01); H04B 1/44 (2013.01);
Abstract
Provided is a semiconductor device that includes a drain electrode and a source electrode, a gate electrode, one or more gate-electrode extensions, and a link. The drain electrode and the source electrode have a planar shape of combs in mesh with each other. The gate electrode is provided between the drain electrode and the source electrode, and has a meandering planar shape. The one or more gate-electrode extensions are projected from the gate electrode. The link is confronted with one or both of the drain electrode and the source electrode, and couples the one or more gate-electrode extensions together.