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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10199391 B1

PDFFull Text
Date of Patent:
Feb. 05, 2019

Filed:

Aug. 28, 2017

Semiconductor device and method of manufacturing the same

Applicant:

Toshiba Memory Corporation, Tokyo, JP;

Inventors:

Taishi Ishikura, Kawasaki Kanagawa, JP;

Atsunobu Isobayashi, Yokohama Kanagawa, JP;

Masayuki Kitamura, Yokkaichi Mie, JP;

Akihiro Kajita, Tsukuba Ibaraki, JP;

Assignee:

TOSHIBA MEMORY CORPORATION, Tokyo, JP;

Attorney:

Patterson & Sheridan, LLP

Primary Examiner:

Minh-Loan Tran

Int. Cl.
CPC ...
H01L 27/11582 (2017.01); H01L 27/11568 (2017.01); H01L 27/11551 (2017.01); H01L 29/792 (2006.01); H01L 27/11556 (2017.01); H01L 27/11575 (2017.01); H01L 27/11565 (2017.01); H01L 29/66 (2006.01); H01L 27/11573 (2017.01); H01L 27/11553 (2017.01); H01L 27/11578 (2017.01);
U.S. Cl.
CPC ...
H01L 27/11582 (2013.01); H01L 27/11551 (2013.01); H01L 27/11553 (2013.01); H01L 27/11556 (2013.01); H01L 27/11565 (2013.01); H01L 27/11568 (2013.01); H01L 27/11573 (2013.01); H01L 27/11575 (2013.01); H01L 27/11578 (2013.01); H01L 29/66833 (2013.01); H01L 29/7926 (2013.01);
Abstract

A semiconductor device includes an under layer, a stacked body comprising a plurality of conductive layers and insulating layers alternately stacked one over the other in a stacking direction, above the insulating layer, a columnar portion extending into the stacked body in the stacking direction of the stacked body, and a graphene film between at least one of the conductive layers and adjacent insulating layers and between the at least one of the conductive layers and the columnar portion.

Find Patent Forward Citations

Ishikura, Taishi. (2019). Semiconductor device and method of manufacturing the same (U.S. Patent No. 10199391). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10199391

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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