The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 05, 2019

Filed:

Feb. 20, 2018
Applicant:

Stmicroelectronics S.r.l., Agrate Brianza, IT;

Inventors:

Vincenzo Palumbo, Vimercate, IT;

Elisabetta Pizzi, Limbiate, IT;

Assignee:

STMicroelectronics S.r.l., Agrate Brianza, IT;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/02 (2006.01); H01L 49/02 (2006.01); H01L 23/522 (2006.01); H01L 23/00 (2006.01); H01L 21/768 (2006.01); H01L 21/283 (2006.01); H01L 23/48 (2006.01); H04L 25/02 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0288 (2013.01); H01L 21/283 (2013.01); H01L 21/76883 (2013.01); H01L 23/48 (2013.01); H01L 23/481 (2013.01); H01L 23/5222 (2013.01); H01L 23/5223 (2013.01); H01L 23/5226 (2013.01); H01L 23/5227 (2013.01); H01L 24/48 (2013.01); H01L 28/60 (2013.01); H04L 25/026 (2013.01); H01L 24/49 (2013.01); H01L 2224/481 (2013.01); H01L 2224/48463 (2013.01); H01L 2224/49107 (2013.01);
Abstract

A method of manufacturing an electronic device for providing galvanic isolation includes forming a dielectric layer on a semiconductor body and integrating, in the dielectric layer, a galvanic isolation module, the integrating including forming a first metal region at a first height of the dielectric layer. A second metal region is formed at a second height greater than the first height of the dielectric layer, the first and second metal regions being at least one of capacitively and magnetically coupleable together. Forming the second metal region includes etching selective portions of the dielectric layer to form at least one trench having a side wall coupled to a bottom wall through rounded surface portions, and filling each trench with metal material to form the second metal region having rounded edges.


Find Patent Forward Citations

Loading…